Doping effects on the electronic and magnetic properties of Zn1−x(Co,Cr)xO systems are investigated within Local Spin Density Approximation and Hubbard U methods. Based on Density Functional Theory the spin-polarization band structures, density of states for investigated systems are calculated. Systematic analysis of the electronic properties shows that TM-doped ZnO has generated new energy levels in the vicinity of Fermi energy level. From first-principle calculations we obtained Cr-ZnO and Co-ZnO systems are metallic and half-metallic ferromagnetic materials, respectively. The obtained results for Cr-doped ZnO 128- and 192-atom supercell systems show magnetic properties with higher Curie temperature than room temperature. There are large local moments, ∼2.9 and ∼4.2 for Co and Cr dopants, respectively. Magnetic moments are related with two electron defects in the supercell structure and unpaired electrons of transition metal. The ferromagnetic and antiferromagnetic phases and the total energy are obtained for x = 2.08%, 3.125%, 4.16%, 6.25%, 8.3%, 12.5%, and 25% impurity concentrations for doped ZnO. © 2024 IOP Publishing Ltd.
The electrical and photoelectric properties of anisotype n-Si−p-GaSe heterojunctions obtained as a result of the deposition of a GaSe thin layer on a cold n-Si single crystal substrate by the thermal evaporation method were studied. It was determined that the height of the potential barrier in thermal annealing structures at T = 200°C during t = 3 hours occurs due to the decrease in the density of states of local levels located near the Fermi level in the amorphous layer. The mechanism of photosensitivity in an isotype heterostructures was analyzed and it was found that the photosensitivity of the heterojunction increases as a result of a decrease in the surface density of state at the contact boundary of the components, by thermal means. The spectral distribution of the quantum efficiency in the n-Si – p-GaSe heterojunction was studied and their perspective was determined. © R.S. Madatov, A.S. Alekperov, F.N. Nurmammadova, N.A. Ismayilova, S.H. Jabarov, 2024.
The radiation oxidation of Be in water at room temperature in the absorbed dose range Dγ = 0.5…180 kGy was studied by radiothermoluminescence (RTL), infrared reflection-adsorption spectroscopy (IRRAS), and electrical conductivity. The participation and role of surface relaxing intermediate-active particles in the dynamics of changes in the oxidation process are considered. Using the RTL method, the role of surface oxygen hole centers generated by γ-irradiation and chemisorbed oxygen in the formation of nanooxide films was experimentally established. The formation of nanooxide films on the surface of Be in water was traced in the IR reflection spectra. The kinetics of radiation oxidation of beryllium has been studied and its radiation passivation has been established. According to the logarithmic dose dependence of the surface resistivity Be, two stages of the oxidation process were revealed. It is shown that the formation of nano oxide films leads to a decrease in the surface electrical conductivity of beryllium by 2 orders of magnitude and an increase in the thickness of oxide films by 1.6 times. © 2023, National Science Center, Kharkov Institute of Physics and Technology. All rights reserved.