STUDY OF DIELECTRIC PROPERTIES AND POWER DISSIPATION OF PTSI/N-SI SCHOTTKY DIODES AS A FUNCTION OF ALTERNATING SIGNAL

Summary: The dielectric properties and power dissipation of PtSi/n-Si Schottky diodes of small area (8x10-6 cm2) were studied when the bias voltage varied in the range -2V ÷ 4V at room temperature. The amplitude of the alternating signal (Vac) varied from 5 mV to 1x103 mV. Studies based on impedance measurements revealed the dependence of dielectric parameters (ε', ε″), ac-conductivity (σac) and power dissipation (P) only at Vac = 200 mV. The obtained result is explained by the inhomogeneity of polarization and surface states.